Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer
文献类型：期刊论文
| 作者 | Wei,X ; Wu,AM ; Wang,X ; Li,XY ; Ye,F ; Chen,J ; Chen,M ; Zhang,B ; Li,CL ; Zhang,M ; Wang,X |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 2010 |
| 卷号 | 28期号:1页码:163-168 |
| 关键词 | LOW-DOSE SEPARATION PSEUDO-MOS TRANSISTOR BURIED OXIDE LAYERS THERMAL-OXIDATION WAFERS SOI FILM SOICMOS |
| ISSN号 | 1071-1023 |
| 通讯作者 | Zhang, M, Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering ; Electrical & Electronic; Nanoscience & Nanotechnology; Physics ; Applied |
| 收录类别 | SCI |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94706]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wei,X,Wu,AM,Wang,X,et al. Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2010,28(1):163-168. |
| APA | Wei,X.,Wu,AM.,Wang,X.,Li,XY.,Ye,F.,...&Wang,X.(2010).Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,28(1),163-168. |
| MLA | Wei,X,et al."Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 28.1(2010):163-168. |
入库方式： OAI收割
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