Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon
文献类型：期刊论文
| 作者 | Di, ZF ; Huang, MQ ; Wang, YQ ; Nastasi, M |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2010 |
| 卷号 | 97期号:19页码:194101-194101 |
| 关键词 | SINGLE-CRYSTAL SILICON INDUCED PLATELETS IMPLANTATION SI TEMPERATURE EXFOLIATION COMPLEXES FLUENCE CUT |
| ISSN号 | 0003-6951 |
| 通讯作者 | Di, ZF, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94719]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Di, ZF,Huang, MQ,Wang, YQ,et al. Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon[J]. APPLIED PHYSICS LETTERS,2010,97(19):194101-194101. |
| APA | Di, ZF,Huang, MQ,Wang, YQ,&Nastasi, M.(2010).Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon.APPLIED PHYSICS LETTERS,97(19),194101-194101. |
| MLA | Di, ZF,et al."Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon".APPLIED PHYSICS LETTERS 97.19(2010):194101-194101. |
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