Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wells
文献类型：期刊论文
| 作者 | Gao, KH ; Yu, G ; Zhou, YM ; Wei, LM ; Lin, T ; Shang, LY ; Sun, L ; Yang, R ; Zhou, WZ ; Dai, N ; Chu, JH ; Austing, DG ; Gu, Y ; Zhang, YG(张永刚） |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2010 |
| 卷号 | 108期号:6页码:63701-63701 |
| 关键词 | GLOBAL PHASE-DIAGRAM MAGNETIC-FIELD 2 DIMENSIONS METALLIC BEHAVIOR HETEROSTRUCTURE UNIVERSALITY SYSTEMS MAGNETOTRANSPORT DELOCALIZATION LIQUID |
| ISSN号 | 0021-8979 |
| 通讯作者 | Gao, KH, E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200062, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94738]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gao, KH,Yu, G,Zhou, YM,et al. Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wells[J]. JOURNAL OF APPLIED PHYSICS,2010,108(6):63701-63701. |
| APA | Gao, KH.,Yu, G.,Zhou, YM.,Wei, LM.,Lin, T.,...&Zhang, YG.(2010).Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wells.JOURNAL OF APPLIED PHYSICS,108(6),63701-63701. |
| MLA | Gao, KH,et al."Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wells".JOURNAL OF APPLIED PHYSICS 108.6(2010):63701-63701. |
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