Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy
文献类型：期刊论文
| 作者 | Ou, X ; Das Kanungo, P ; Kogler, R ; Werner, P ; Gosele, U ; Skorupa, W ; Wang, X |
| 刊名 | NANO LETTERS
 |
| 出版日期 | 2010 |
| 卷号 | 10期号:1页码:171-175 |
| 关键词 | SILICON NANOWIRES PILE-UP PHOSPHORUS IMPURITIES INTERFACE TRANSPORT GERMANIUM DENSITY |
| ISSN号 | 1530-6984 |
| 通讯作者 | Ou, X, Max Planck Inst Microstruct Phys, Weinberg 2, D-06120 Halle, Germany |
| 学科主题 | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94739]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ou, X,Das Kanungo, P,Kogler, R,et al. Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy[J]. NANO LETTERS,2010,10(1):171-175. |
| APA | Ou, X.,Das Kanungo, P.,Kogler, R.,Werner, P.,Gosele, U.,...&Wang, X.(2010).Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy.NANO LETTERS,10(1),171-175. |
| MLA | Ou, X,et al."Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy".NANO LETTERS 10.1(2010):171-175. |
入库方式： OAI收割
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