The construction of Si2Sb2Te5 electrical probe storage based on UV nanoimprint lithography
文献类型：期刊论文
| 作者 | Liu, YB ; Zhang, T ; Zhang, GX ; Song, ZT ; Zhang, J ; Zhou, WM ; Zhang, JP |
| 刊名 | NANOTECHNOLOGY
 |
| 出版日期 | 2009 |
| 卷号 | 20期号:31页码:315304-315304 |
| 关键词 | PHASE-CHANGE MATERIAL RANDOM-ACCESS MEMORY IMPRINT LITHOGRAPHY NONVOLATILE SILICON DEVICE TE |
| ISSN号 | 0957-4484 |
| 通讯作者 | Liu, YB, Shanghai Nanotechnol Promot Ctr, Lab Nanotechnol, Shanghai 200237, Peoples R China |
| 学科主题 | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94755]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, YB,Zhang, T,Zhang, GX,et al. The construction of Si2Sb2Te5 electrical probe storage based on UV nanoimprint lithography[J]. NANOTECHNOLOGY,2009,20(31):315304-315304. |
| APA | Liu, YB.,Zhang, T.,Zhang, GX.,Song, ZT.,Zhang, J.,...&Zhang, JP.(2009).The construction of Si2Sb2Te5 electrical probe storage based on UV nanoimprint lithography.NANOTECHNOLOGY,20(31),315304-315304. |
| MLA | Liu, YB,et al."The construction of Si2Sb2Te5 electrical probe storage based on UV nanoimprint lithography".NANOTECHNOLOGY 20.31(2009):315304-315304. |
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