Simulation of Phase Change Random Access Memory for Low Reset Current and High Thermal Efficiency by Finite Element Modeling
文献类型：期刊论文
| 作者 | Gong, YF ; Ling, Y ; Song, ZT ; Feng, SL |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2009 |
| 卷号 | 48期号:6页码:64505-64505 |
| ISSN号 | 0021-4922 |
| 关键词 | DEVICE MEDIA |
| 通讯作者 | Gong, YF, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94759]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gong, YF,Ling, Y,Song, ZT,et al. Simulation of Phase Change Random Access Memory for Low Reset Current and High Thermal Efficiency by Finite Element Modeling[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2009,48(6):64505-64505. |
| APA | Gong, YF,Ling, Y,Song, ZT,&Feng, SL.(2009).Simulation of Phase Change Random Access Memory for Low Reset Current and High Thermal Efficiency by Finite Element Modeling.JAPANESE JOURNAL OF APPLIED PHYSICS,48(6),64505-64505. |
| MLA | Gong, YF,et al."Simulation of Phase Change Random Access Memory for Low Reset Current and High Thermal Efficiency by Finite Element Modeling".JAPANESE JOURNAL OF APPLIED PHYSICS 48.6(2009):64505-64505. |
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