Exciton localization effect in Mn-implanted GaN by photoluminescence measurements
文献类型：期刊论文
| 作者 | Meng, XY ; Zhang, YH ; Shen, WZ |
| 刊名 | PHYSICA B-CONDENSED MATTER
 |
| 出版日期 | 2009 |
| 卷号 | 404期号:8-11页码:1222-1225 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION MAGNETIC-PROPERTIES THIN-FILMS POTENTIAL FLUCTUATIONS SEMICONDUCTORS TEMPERATURE TRANSITIONS EPILAYERS LAYERS LEVEL |
| ISSN号 | 0921-4526 |
| 通讯作者 | Zhang, YH, Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, 1954 Hua Shan Rd, Shanghai 200030, Peoples R China |
| 学科主题 | Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94769]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Meng, XY,Zhang, YH,Shen, WZ. Exciton localization effect in Mn-implanted GaN by photoluminescence measurements[J]. PHYSICA B-CONDENSED MATTER,2009,404(8-11):1222-1225. |
| APA | Meng, XY,Zhang, YH,&Shen, WZ.(2009).Exciton localization effect in Mn-implanted GaN by photoluminescence measurements.PHYSICA B-CONDENSED MATTER,404(8-11),1222-1225. |
| MLA | Meng, XY,et al."Exciton localization effect in Mn-implanted GaN by photoluminescence measurements".PHYSICA B-CONDENSED MATTER 404.8-11(2009):1222-1225. |
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