中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Acid and Surfactant Effect on Chemical Mechanical Polishing of Ge2Sb2Te5

文献类型:期刊论文

作者Wang, LY ; Liu, B ; Song, ZT ; Feng, SL ; Xiang, YH ; Zhang, FX
刊名JOURNAL OF THE ELECTROCHEMICAL SOCIETY
出版日期2009
卷号156期号:9页码:H699-H702
关键词NITROGEN-DOPED GE2SB2TE5 FILM MEMORY GLASS
ISSN号0013-4651
通讯作者Wang, LY, Chinese Acad Sci, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题Electrochemistry; Materials Science, Coatings & Films
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/94777]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Wang, LY,Liu, B,Song, ZT,et al. Acid and Surfactant Effect on Chemical Mechanical Polishing of Ge2Sb2Te5[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2009,156(9):H699-H702.
APA Wang, LY,Liu, B,Song, ZT,Feng, SL,Xiang, YH,&Zhang, FX.(2009).Acid and Surfactant Effect on Chemical Mechanical Polishing of Ge2Sb2Te5.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,156(9),H699-H702.
MLA Wang, LY,et al."Acid and Surfactant Effect on Chemical Mechanical Polishing of Ge2Sb2Te5".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156.9(2009):H699-H702.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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