Acid and Surfactant Effect on Chemical Mechanical Polishing of Ge2Sb2Te5
文献类型:期刊论文
作者 | Wang, LY ; Liu, B ; Song, ZT ; Feng, SL ; Xiang, YH ; Zhang, FX |
刊名 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY
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出版日期 | 2009 |
卷号 | 156期号:9页码:H699-H702 |
关键词 | NITROGEN-DOPED GE2SB2TE5 FILM MEMORY GLASS |
ISSN号 | 0013-4651 |
通讯作者 | Wang, LY, Chinese Acad Sci, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
学科主题 | Electrochemistry; Materials Science, Coatings & Films |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
源URL | [http://ir.sim.ac.cn/handle/331004/94777] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Wang, LY,Liu, B,Song, ZT,et al. Acid and Surfactant Effect on Chemical Mechanical Polishing of Ge2Sb2Te5[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2009,156(9):H699-H702. |
APA | Wang, LY,Liu, B,Song, ZT,Feng, SL,Xiang, YH,&Zhang, FX.(2009).Acid and Surfactant Effect on Chemical Mechanical Polishing of Ge2Sb2Te5.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,156(9),H699-H702. |
MLA | Wang, LY,et al."Acid and Surfactant Effect on Chemical Mechanical Polishing of Ge2Sb2Te5".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156.9(2009):H699-H702. |
入库方式: OAI收割
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