Physical Description of Quasi-Saturation and Impact-Ionization Effects in High-Voltage Drain-Extended MOSFETs
文献类型：期刊论文
| 作者 | Wang, L ; Wang, J ; Gao, C ; Hu, J ; Li, P ; Li, WJ ; Yang, SHY |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 出版日期 | 2009 |
| 卷号 | 56期号:3页码:492-498 |
| 关键词 | MODEL TRANSISTORS CIRCUIT DESIGN ANALOG |
| ISSN号 | 0018-9383 |
| 通讯作者 | Wang, L, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94792]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, L,Wang, J,Gao, C,et al. Physical Description of Quasi-Saturation and Impact-Ionization Effects in High-Voltage Drain-Extended MOSFETs[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2009,56(3):492-498. |
| APA | Wang, L.,Wang, J.,Gao, C.,Hu, J.,Li, P.,...&Yang, SHY.(2009).Physical Description of Quasi-Saturation and Impact-Ionization Effects in High-Voltage Drain-Extended MOSFETs.IEEE TRANSACTIONS ON ELECTRON DEVICES,56(3),492-498. |
| MLA | Wang, L,et al."Physical Description of Quasi-Saturation and Impact-Ionization Effects in High-Voltage Drain-Extended MOSFETs".IEEE TRANSACTIONS ON ELECTRON DEVICES 56.3(2009):492-498. |
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