中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Study of silicon-on-insulator substrates incorporated with buried MoSi2 layer

文献类型:期刊论文

作者Chen, C ; Liu, WL ; Ma, XB ; Shen, QW ; Song, ZT ; Lin, CL
刊名THIN SOLID FILMS
出版日期2009
卷号517期号:8页码:2724-2728
关键词THIN-FILMS RESISTIVITY SILICIDES
ISSN号0040-6090
通讯作者Liu, WL, Chinese Acad Sci, Nano Technol Lab, SIMIT, Shanghai 200050, Peoples R China
学科主题Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/94806]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Chen, C,Liu, WL,Ma, XB,et al. Study of silicon-on-insulator substrates incorporated with buried MoSi2 layer[J]. THIN SOLID FILMS,2009,517(8):2724-2728.
APA Chen, C,Liu, WL,Ma, XB,Shen, QW,Song, ZT,&Lin, CL.(2009).Study of silicon-on-insulator substrates incorporated with buried MoSi2 layer.THIN SOLID FILMS,517(8),2724-2728.
MLA Chen, C,et al."Study of silicon-on-insulator substrates incorporated with buried MoSi2 layer".THIN SOLID FILMS 517.8(2009):2724-2728.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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