Oxygen gettering in Si by He ion implantation-induced cavity layer
文献类型：期刊论文
| 作者 | Ou, X ; Zhang, B ; Wu, AM ; Zhang, M ; Wang, X |
| 刊名 | NUCLEAR SCIENCE AND TECHNIQUES
 |
| 出版日期 | 2009 |
| 卷号 | 20期号:4页码:202-207 |
| 关键词 | BURIED OXIDE LAYERS SILICON DISLOCATIONS GENERATION VOIDS AU |
| ISSN号 | 1001-8042 |
| 通讯作者 | Ou, X, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informart, Shanghai 200050, Peoples R China |
| 学科主题 | Nuclear Science & Technology; Physics, Nuclear |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94816]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ou, X,Zhang, B,Wu, AM,et al. Oxygen gettering in Si by He ion implantation-induced cavity layer[J]. NUCLEAR SCIENCE AND TECHNIQUES,2009,20(4):202-207. |
| APA | Ou, X,Zhang, B,Wu, AM,Zhang, M,&Wang, X.(2009).Oxygen gettering in Si by He ion implantation-induced cavity layer.NUCLEAR SCIENCE AND TECHNIQUES,20(4),202-207. |
| MLA | Ou, X,et al."Oxygen gettering in Si by He ion implantation-induced cavity layer".NUCLEAR SCIENCE AND TECHNIQUES 20.4(2009):202-207. |
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