中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE

文献类型:期刊论文

作者Gu, Y ; Li, H ; Li, AZ ; Li, YY ; Wei, L ; Zhang, YG(张永刚) ; Wang, K ; Zheng, YL
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2009
卷号311期号:7页码:1929-1931
关键词CONTINUOUS-WAVE OPERATION LAMBDA-SIMILAR-TO-4.8 MU-M ROOM-TEMPERATURE HIGH-POWER
ISSN号0022-0248
通讯作者Li, AZ, E China Normal Univ, Sch Informat, 3663 N Zhongshan Rd, Shanghai 200062, Peoples R China
学科主题Crystallography; Materials Science, Multidisciplinary; Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/94824]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Gu, Y,Li, H,Li, AZ,et al. Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE[J]. JOURNAL OF CRYSTAL GROWTH,2009,311(7):1929-1931.
APA Gu, Y.,Li, H.,Li, AZ.,Li, YY.,Wei, L.,...&Zheng, YL.(2009).Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE.JOURNAL OF CRYSTAL GROWTH,311(7),1929-1931.
MLA Gu, Y,et al."Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE".JOURNAL OF CRYSTAL GROWTH 311.7(2009):1929-1931.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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