Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well
文献类型:期刊论文
作者 | Gao, KH ; Zhou, WZ ; Zhou, YM ; Yu, G ; Lin, T ; Guo, SL ; Chu, JH ; Dai, N ; Gu, Y ; Zhang, YG(张永刚) ; Austing, DG |
刊名 | APPLIED PHYSICS LETTERS
![]() |
出版日期 | 2009 |
卷号 | 94期号:15页码:152107-152107 |
关键词 | HETEROSTRUCTURE |
ISSN号 | 0003-6951 |
通讯作者 | Yu, G, Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China |
学科主题 | Physics, Applied |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
源URL | [http://ir.sim.ac.cn/handle/331004/94828] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Gao, KH,Zhou, WZ,Zhou, YM,et al. Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well[J]. APPLIED PHYSICS LETTERS,2009,94(15):152107-152107. |
APA | Gao, KH.,Zhou, WZ.,Zhou, YM.,Yu, G.,Lin, T.,...&Austing, DG.(2009).Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well.APPLIED PHYSICS LETTERS,94(15),152107-152107. |
MLA | Gao, KH,et al."Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well".APPLIED PHYSICS LETTERS 94.15(2009):152107-152107. |
入库方式: OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。