中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well

文献类型:期刊论文

作者Gao, KH ; Zhou, WZ ; Zhou, YM ; Yu, G ; Lin, T ; Guo, SL ; Chu, JH ; Dai, N ; Gu, Y ; Zhang, YG(张永刚) ; Austing, DG
刊名APPLIED PHYSICS LETTERS
出版日期2009
卷号94期号:15页码:152107-152107
关键词HETEROSTRUCTURE
ISSN号0003-6951
通讯作者Yu, G, Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
学科主题Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/94828]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Gao, KH,Zhou, WZ,Zhou, YM,et al. Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well[J]. APPLIED PHYSICS LETTERS,2009,94(15):152107-152107.
APA Gao, KH.,Zhou, WZ.,Zhou, YM.,Yu, G.,Lin, T.,...&Austing, DG.(2009).Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well.APPLIED PHYSICS LETTERS,94(15),152107-152107.
MLA Gao, KH,et al."Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well".APPLIED PHYSICS LETTERS 94.15(2009):152107-152107.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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