Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructures
文献类型：期刊论文
| 作者 | Wu, H ; Yuan, J ; Peng, T ; Pan, Y ; Han, T ; Shen, K ; Zhao, BR ; Liu, C |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2009 |
| 卷号 | 42期号:18页码:185302-185302 |
| 关键词 | NONVOLATILE MEMORY DEVICES THIN-FILMS PLATINUM-ELECTRODES GROWTH DEPOSITION SI CANDIDATE OXIDES FIELD |
| ISSN号 | 0022-3727 |
| 通讯作者 | Liu, C, Wuhan Univ, Key Lab Acoust & Photon Mat & Devices, Minist Educ, Wuhan 430072, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94831]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wu, H,Yuan, J,Peng, T,et al. Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructures[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009,42(18):185302-185302. |
| APA | Wu, H.,Yuan, J.,Peng, T.,Pan, Y.,Han, T.,...&Liu, C.(2009).Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructures.JOURNAL OF PHYSICS D-APPLIED PHYSICS,42(18),185302-185302. |
| MLA | Wu, H,et al."Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructures".JOURNAL OF PHYSICS D-APPLIED PHYSICS 42.18(2009):185302-185302. |
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