中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-Temperature Buffer Layer

文献类型:期刊论文

作者Guo, QX ; Sueyasu, Y ; Tanaka, T ; Nishio, M ; Cao, JC
刊名JAPANESE JOURNAL OF APPLIED PHYSICS
出版日期2009
卷号48期号:8页码:-
关键词Physics Applied
ISSN号0021-4922
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/94836]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Guo, QX,Sueyasu, Y,Tanaka, T,et al. Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-Temperature Buffer Layer[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2009,48(8):-.
APA Guo, QX,Sueyasu, Y,Tanaka, T,Nishio, M,&Cao, JC.(2009).Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-Temperature Buffer Layer.JAPANESE JOURNAL OF APPLIED PHYSICS,48(8),-.
MLA Guo, QX,et al."Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-Temperature Buffer Layer".JAPANESE JOURNAL OF APPLIED PHYSICS 48.8(2009):-.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。