Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz
文献类型：期刊论文
| 作者 | Cheng, W ; Jin, Z ; Su, YB ; Liu, XY ; Xu, AH ; Qi, M |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:3页码:38502-38502 |
| 关键词 | HIGH-BREAKDOWN-VOLTAGE DHBT TECHNOLOGY F(MAX) |
| ISSN号 | 0256-307X |
| 通讯作者 | Cheng, W, Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94853]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cheng, W,Jin, Z,Su, YB,et al. Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz[J]. CHINESE PHYSICS LETTERS,2009,26(3):38502-38502. |
| APA | Cheng, W,Jin, Z,Su, YB,Liu, XY,Xu, AH,&Qi, M.(2009).Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz.CHINESE PHYSICS LETTERS,26(3),38502-38502. |
| MLA | Cheng, W,et al."Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz".CHINESE PHYSICS LETTERS 26.3(2009):38502-38502. |
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