Dry Etching of Nanosized Ge1Sb2Te4 Patterns Using TiN Hard Mask for High Density Phase-Change Memory
文献类型：期刊论文
| 作者 | Feng, GM ; Liu, B ; Song, ZT ; Lv, SL ; Wu, LC ; Feng, SL ; Chen, B |
| 刊名 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
 |
| 出版日期 | 2009 |
| 卷号 | 9期号:2页码:1526-1529 |
| 关键词 | THIN-FILMS GE2SB2TE5 DEVICE |
| ISSN号 | 1533-4880 |
| 通讯作者 | Feng, GM, CAS, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94856]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Feng, GM,Liu, B,Song, ZT,et al. Dry Etching of Nanosized Ge1Sb2Te4 Patterns Using TiN Hard Mask for High Density Phase-Change Memory[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2009,9(2):1526-1529. |
| APA | Feng, GM.,Liu, B.,Song, ZT.,Lv, SL.,Wu, LC.,...&Chen, B.(2009).Dry Etching of Nanosized Ge1Sb2Te4 Patterns Using TiN Hard Mask for High Density Phase-Change Memory.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,9(2),1526-1529. |
| MLA | Feng, GM,et al."Dry Etching of Nanosized Ge1Sb2Te4 Patterns Using TiN Hard Mask for High Density Phase-Change Memory".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 9.2(2009):1526-1529. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。