O-Doped Si2Sb2Te5 Nano-Composite Phase Change Material for Application of Chalcogenide Random Access Memory
文献类型：期刊论文
| 作者 | Zhang, T ; Song, ZT ; Liu, B ; Wang, F ; Feng, SL |
| 刊名 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
 |
| 出版日期 | 2009 |
| 卷号 | 9期号:2页码:1090-1093 |
| 关键词 | GE2SB2TE5 FILMS |
| ISSN号 | 1533-4880 |
| 通讯作者 | Zhang, T, Chinese Acad Sci, Shanghai Inst MicroSyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94857]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, T,Song, ZT,Liu, B,et al. O-Doped Si2Sb2Te5 Nano-Composite Phase Change Material for Application of Chalcogenide Random Access Memory[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2009,9(2):1090-1093. |
| APA | Zhang, T,Song, ZT,Liu, B,Wang, F,&Feng, SL.(2009).O-Doped Si2Sb2Te5 Nano-Composite Phase Change Material for Application of Chalcogenide Random Access Memory.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,9(2),1090-1093. |
| MLA | Zhang, T,et al."O-Doped Si2Sb2Te5 Nano-Composite Phase Change Material for Application of Chalcogenide Random Access Memory".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 9.2(2009):1090-1093. |
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