Fabrication of high Ge content SiGe-on-insulator with low dislocation density by modified Ge condensation
文献类型：期刊论文
| 作者 | Ma, XB ; Liu, WL ; Chen, C ; Du, XF ; Liu, XY ; Song, ZT ; Lin, CL |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2009 |
| 卷号 | 255期号:17页码:7743-7748 |
| 关键词 | STRAINED SI MOBILITY DEVICES LAYERS |
| ISSN号 | 0169-4332 |
| 通讯作者 | Liu, WL, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Nano Technol Lab, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94861]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ma, XB,Liu, WL,Chen, C,et al. Fabrication of high Ge content SiGe-on-insulator with low dislocation density by modified Ge condensation[J]. APPLIED SURFACE SCIENCE,2009,255(17):7743-7748. |
| APA | Ma, XB.,Liu, WL.,Chen, C.,Du, XF.,Liu, XY.,...&Lin, CL.(2009).Fabrication of high Ge content SiGe-on-insulator with low dislocation density by modified Ge condensation.APPLIED SURFACE SCIENCE,255(17),7743-7748. |
| MLA | Ma, XB,et al."Fabrication of high Ge content SiGe-on-insulator with low dislocation density by modified Ge condensation".APPLIED SURFACE SCIENCE 255.17(2009):7743-7748. |
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