InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching
文献类型：期刊论文
| 作者 | Cao, M ; Wu, HZ ; Lao, YF ; Cao, CF ; Liu, C |
| 刊名 | MATERIALS RESEARCH BULLETIN
 |
| 出版日期 | 2009 |
| 卷号 | 44期号:12页码:2217-2221 |
| 关键词 | VAPOR-PHASE EPITAXY INASP/INP ENHANCEMENT PHOTOLUMINESCENCE LUMINESCENCE DEPENDENCE DOTS GAP |
| ISSN号 | 0025-5408 |
| 通讯作者 | Cao, M, Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China |
| 学科主题 | Materials Science, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94877]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cao, M,Wu, HZ,Lao, YF,et al. InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching[J]. MATERIALS RESEARCH BULLETIN,2009,44(12):2217-2221. |
| APA | Cao, M,Wu, HZ,Lao, YF,Cao, CF,&Liu, C.(2009).InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching.MATERIALS RESEARCH BULLETIN,44(12),2217-2221. |
| MLA | Cao, M,et al."InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching".MATERIALS RESEARCH BULLETIN 44.12(2009):2217-2221. |
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