Study on Adhesive Strength between Ge2Sb2Te5 Film and Electrodes for Phase Change Memory Application
文献类型：期刊论文
| 作者 | Liu, YB ; Zhang, T ; Zhang, GX ; Niu, XM ; Song, ZT ; Min, GQ ; Lin, Y ; Zhang, J ; Zhou, WM ; Zhang, JP ; Chu, JT ; Wan, YZ ; Feng, SL |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2009 |
| 卷号 | 48期号:10页码:101601-101601 |
| 关键词 | THIN-FILMS CRYSTALLIZATION RESISTANCE |
| ISSN号 | 0021-4922 |
| 通讯作者 | Liu, YB, Shanghai Nanotechnol Promot Ctr, Lab Nanotechnol, Shanghai 200237, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94886]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, YB,Zhang, T,Zhang, GX,et al. Study on Adhesive Strength between Ge2Sb2Te5 Film and Electrodes for Phase Change Memory Application[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2009,48(10):101601-101601. |
| APA | Liu, YB.,Zhang, T.,Zhang, GX.,Niu, XM.,Song, ZT.,...&Feng, SL.(2009).Study on Adhesive Strength between Ge2Sb2Te5 Film and Electrodes for Phase Change Memory Application.JAPANESE JOURNAL OF APPLIED PHYSICS,48(10),101601-101601. |
| MLA | Liu, YB,et al."Study on Adhesive Strength between Ge2Sb2Te5 Film and Electrodes for Phase Change Memory Application".JAPANESE JOURNAL OF APPLIED PHYSICS 48.10(2009):101601-101601. |
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