Mechanism of selective Si3N4 etching over SiO2 in hydrogen-containing fluorocarbon plasma
文献类型：期刊论文
| 作者 | Chen, LL ; Xu, LD ; Li, DX ; Lin, B |
| 刊名 | MICROELECTRONIC ENGINEERING
 |
| 出版日期 | 2009 |
| 卷号 | 86期号:11页码:2354-2357 |
| 关键词 | SILICON-NITRIDE OXIDE DIOXIDE REACTOR RATES CHF3 |
| ISSN号 | 0167-9317 |
| 通讯作者 | Chen, LL, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94888]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, LL,Xu, LD,Li, DX,et al. Mechanism of selective Si3N4 etching over SiO2 in hydrogen-containing fluorocarbon plasma[J]. MICROELECTRONIC ENGINEERING,2009,86(11):2354-2357. |
| APA | Chen, LL,Xu, LD,Li, DX,&Lin, B.(2009).Mechanism of selective Si3N4 etching over SiO2 in hydrogen-containing fluorocarbon plasma.MICROELECTRONIC ENGINEERING,86(11),2354-2357. |
| MLA | Chen, LL,et al."Mechanism of selective Si3N4 etching over SiO2 in hydrogen-containing fluorocarbon plasma".MICROELECTRONIC ENGINEERING 86.11(2009):2354-2357. |
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