Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition
文献类型：期刊论文
| 作者 | Yan, X ; Feng, F ; Zhang, J ; Wang, YL |
| 刊名 | PLASMA SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2009 |
| 卷号 | 11期号:5页码:569-575 |
| 关键词 | A-SI-H THIN-FILMS ION-BOMBARDMENT LOW-TEMPERATURE SILANE PLASMA GROWTH PECVD DIFFUSION ROUGHNESS FREQUENCY |
| ISSN号 | 1009-0630 |
| 通讯作者 | Feng, F, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Fluids & Plasmas |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94891]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yan, X,Feng, F,Zhang, J,et al. Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition[J]. PLASMA SCIENCE & TECHNOLOGY,2009,11(5):569-575. |
| APA | Yan, X,Feng, F,Zhang, J,&Wang, YL.(2009).Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition.PLASMA SCIENCE & TECHNOLOGY,11(5),569-575. |
| MLA | Yan, X,et al."Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition".PLASMA SCIENCE & TECHNOLOGY 11.5(2009):569-575. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。