PULSED, Q-SWITCHED RUBY-LASER ANNEALING OF BI IMPLANTED SI CRYSTALS INVESTIGATED BY CHANNELING
文献类型：期刊论文
| 作者 | DEUTCH, BI ; TSOU, SC ; LEOU, SH ; ZHOU, ZY ; ZENG, HJ ; DAI, RZ ; CHU, TC ; CAO, DX |
| 刊名 | RADIATION EFFECTS AND DEFECTS IN SOLIDS
 |
| 出版日期 | 1979 |
| 卷号 | 45期号:1-2页码:103-109 |
| ISSN号 | 1042-0150 |
| 通讯作者 | DEUTCH, BI, AARHUS UNIV,INST PHYS,DK-8000 AARHUS C,DENMARK |
| 学科主题 | Nuclear Science & Technology; Physics, Condensed Matter |
| 收录类别 | SCI |
| 原文出处 | http://www.tandfonline.com/doi/abs/10.1080/00337577908208415 |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/97988]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | DEUTCH, BI,TSOU, SC,LEOU, SH,et al. PULSED, Q-SWITCHED RUBY-LASER ANNEALING OF BI IMPLANTED SI CRYSTALS INVESTIGATED BY CHANNELING[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS,1979,45(1-2):103-109. |
| APA | DEUTCH, BI.,TSOU, SC.,LEOU, SH.,ZHOU, ZY.,ZENG, HJ.,...&CAO, DX.(1979).PULSED, Q-SWITCHED RUBY-LASER ANNEALING OF BI IMPLANTED SI CRYSTALS INVESTIGATED BY CHANNELING.RADIATION EFFECTS AND DEFECTS IN SOLIDS,45(1-2),103-109. |
| MLA | DEUTCH, BI,et al."PULSED, Q-SWITCHED RUBY-LASER ANNEALING OF BI IMPLANTED SI CRYSTALS INVESTIGATED BY CHANNELING".RADIATION EFFECTS AND DEFECTS IN SOLIDS 45.1-2(1979):103-109. |
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