中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
PULSED RUBY AND CW, ND-YAG LASER ANNEALING OF BI IMPLANTED SI SINGLE-CRYSTALS INVESTIGATED BY CHANNELING

文献类型:期刊论文

作者DEUTCH,BI ; CHU,TC ; CAO,DX ; LEOU,SH ; ZHOW,ZY ; HU,JZ ; DAI,RZ ; TSOU,SC
刊名RADIATION EFFECTS AND DEFECTS IN SOLIDS
出版日期1980
卷号51期号:3-4页码:179-184
ISSN号1042-0150
通讯作者DEUTCH, BI, AARHUS UNIV,INST PHYS,DK-8000 AARHUS C,DENMARK
学科主题Nuclear Science & Technology; Physics ; Condensed Matter
收录类别SCI
原文出处http://www.tandfonline.com/doi/abs/10.1080/00337578008209998
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/97990]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
DEUTCH,BI,CHU,TC,CAO,DX,et al. PULSED RUBY AND CW, ND-YAG LASER ANNEALING OF BI IMPLANTED SI SINGLE-CRYSTALS INVESTIGATED BY CHANNELING[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS,1980,51(3-4):179-184.
APA DEUTCH,BI.,CHU,TC.,CAO,DX.,LEOU,SH.,ZHOW,ZY.,...&TSOU,SC.(1980).PULSED RUBY AND CW, ND-YAG LASER ANNEALING OF BI IMPLANTED SI SINGLE-CRYSTALS INVESTIGATED BY CHANNELING.RADIATION EFFECTS AND DEFECTS IN SOLIDS,51(3-4),179-184.
MLA DEUTCH,BI,et al."PULSED RUBY AND CW, ND-YAG LASER ANNEALING OF BI IMPLANTED SI SINGLE-CRYSTALS INVESTIGATED BY CHANNELING".RADIATION EFFECTS AND DEFECTS IN SOLIDS 51.3-4(1980):179-184.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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