LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING
文献类型:期刊论文
作者 | CAO, DX ; CHU, TC ; ZHOU, ZY ; DAI, RZ ; HU, JZ ; DEUTCH, BI |
刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH
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出版日期 | 1981 |
卷号 | 191期号:1-3页码:54-58 |
ISSN号 | 0029-554X |
通讯作者 | CAO, DX, CHINESE ACAD SCI,SHANGHAI INST NUCL RES,SHANGHAI,PEOPLES R CHINA |
学科主题 | Instruments & Instrumentation; Nuclear Science & Technology |
收录类别 | SCI |
原文出处 | http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=319&SID=Y1p6iIKgd@dencla9el&page=1&doc=1 |
语种 | 英语 |
公开日期 | 2012-03-25 |
源URL | [http://ir.sim.ac.cn/handle/331004/97994] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前) |
推荐引用方式 GB/T 7714 | CAO, DX,CHU, TC,ZHOU, ZY,et al. LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH,1981,191(1-3):54-58. |
APA | CAO, DX,CHU, TC,ZHOU, ZY,DAI, RZ,HU, JZ,&DEUTCH, BI.(1981).LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH,191(1-3),54-58. |
MLA | CAO, DX,et al."LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH 191.1-3(1981):54-58. |
入库方式: OAI收割
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