中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING

文献类型:期刊论文

作者CAO, DX ; CHU, TC ; ZHOU, ZY ; DAI, RZ ; HU, JZ ; DEUTCH, BI
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH
出版日期1981
卷号191期号:1-3页码:54-58
ISSN号0029-554X
通讯作者CAO, DX, CHINESE ACAD SCI,SHANGHAI INST NUCL RES,SHANGHAI,PEOPLES R CHINA
学科主题Instruments & Instrumentation; Nuclear Science & Technology
收录类别SCI
原文出处http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=319&SID=Y1p6iIKgd@dencla9el&page=1&doc=1
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/97994]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
CAO, DX,CHU, TC,ZHOU, ZY,et al. LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH,1981,191(1-3):54-58.
APA CAO, DX,CHU, TC,ZHOU, ZY,DAI, RZ,HU, JZ,&DEUTCH, BI.(1981).LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH,191(1-3),54-58.
MLA CAO, DX,et al."LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH 191.1-3(1981):54-58.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。