ASPECTS OF GAAS SELECTIVE AREA GROWTH BY MOLECULAR-BEAM EPITAXY WITH PATTERNING BY SIO2 MASKING
文献类型：期刊论文
| 作者 | LI, AZ ; CHENG, H ; MILNES, AG |
| 刊名 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY
 |
| 出版日期 | 1983 |
| 卷号 | 130期号:10页码:2072-2075 |
| ISSN号 | 0013-4651 |
| 通讯作者 | LI, AZ, SHANGHAI INST MET,SHANGHAI,PEOPLES R CHINA |
| 学科主题 | Electrochemistry; Materials Science, Coatings & Films |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98022]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | LI, AZ,CHENG, H,MILNES, AG. ASPECTS OF GAAS SELECTIVE AREA GROWTH BY MOLECULAR-BEAM EPITAXY WITH PATTERNING BY SIO2 MASKING[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,1983,130(10):2072-2075. |
| APA | LI, AZ,CHENG, H,&MILNES, AG.(1983).ASPECTS OF GAAS SELECTIVE AREA GROWTH BY MOLECULAR-BEAM EPITAXY WITH PATTERNING BY SIO2 MASKING.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,130(10),2072-2075. |
| MLA | LI, AZ,et al."ASPECTS OF GAAS SELECTIVE AREA GROWTH BY MOLECULAR-BEAM EPITAXY WITH PATTERNING BY SIO2 MASKING".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 130.10(1983):2072-2075. |
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