中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
HOPPING AND BAND TRANSPORT IN AMORPHIZED SEMICONDUCTORS - A COMPARATIVE-STUDY

文献类型:期刊论文

作者DENG, XC ; LIU, XH ; BOHRINGER, K ; KALBITZER, S
刊名APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
出版日期1984
卷号33期号:1页码:29-35
ISSN号0947-8396
通讯作者DENG, XC, HEBEI SEMICOND RES INST,HEBEI,PEOPLES R CHINA
学科主题Materials Science, Multidisciplinary; Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98043]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
DENG, XC,LIU, XH,BOHRINGER, K,et al. HOPPING AND BAND TRANSPORT IN AMORPHIZED SEMICONDUCTORS - A COMPARATIVE-STUDY[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,1984,33(1):29-35.
APA DENG, XC,LIU, XH,BOHRINGER, K,&KALBITZER, S.(1984).HOPPING AND BAND TRANSPORT IN AMORPHIZED SEMICONDUCTORS - A COMPARATIVE-STUDY.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,33(1),29-35.
MLA DENG, XC,et al."HOPPING AND BAND TRANSPORT IN AMORPHIZED SEMICONDUCTORS - A COMPARATIVE-STUDY".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 33.1(1984):29-35.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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