A NEW TECHNOLOGY FOR MAKING THE SIO2 MASK WITH SUB-MICRON GROOVES ON GAAS SUBSTRATES
文献类型:期刊论文
作者 | CHEN,XG ; REN,ZX ; XU,SH ; PAN,HZ ; YANG,J |
刊名 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
出版日期 | 1985 |
卷号 | 132期号:9页码:C404-C405 |
ISSN号 | 0013-4651 |
学科主题 | Electrochemistry; Materials Science, Coatings & Films |
收录类别 | SCI |
原文出处 | http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=196&SID=Y1p6iIKgd@dencla9el&page=1&doc=1 |
语种 | 英语 |
公开日期 | 2012-03-25 |
源URL | [http://ir.sim.ac.cn/handle/331004/98053] |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前) |
推荐引用方式 GB/T 7714 | CHEN,XG,REN,ZX,XU,SH,et al. A NEW TECHNOLOGY FOR MAKING THE SIO2 MASK WITH SUB-MICRON GROOVES ON GAAS SUBSTRATES[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,1985,132(9):C404-C405. |
APA | CHEN,XG,REN,ZX,XU,SH,PAN,HZ,&YANG,J.(1985).A NEW TECHNOLOGY FOR MAKING THE SIO2 MASK WITH SUB-MICRON GROOVES ON GAAS SUBSTRATES.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,132(9),C404-C405. |
MLA | CHEN,XG,et al."A NEW TECHNOLOGY FOR MAKING THE SIO2 MASK WITH SUB-MICRON GROOVES ON GAAS SUBSTRATES".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 132.9(1985):C404-C405. |
入库方式: OAI收割
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