中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A NEW TECHNOLOGY FOR MAKING THE SIO2 MASK WITH SUB-MICRON GROOVES ON GAAS SUBSTRATES

文献类型:期刊论文

作者CHEN,XG ; REN,ZX ; XU,SH ; PAN,HZ ; YANG,J
刊名JOURNAL OF THE ELECTROCHEMICAL SOCIETY
出版日期1985
卷号132期号:9页码:C404-C405
ISSN号0013-4651
学科主题Electrochemistry; Materials Science, Coatings & Films
收录类别SCI
原文出处http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=196&SID=Y1p6iIKgd@dencla9el&page=1&doc=1
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98053]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
CHEN,XG,REN,ZX,XU,SH,et al. A NEW TECHNOLOGY FOR MAKING THE SIO2 MASK WITH SUB-MICRON GROOVES ON GAAS SUBSTRATES[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,1985,132(9):C404-C405.
APA CHEN,XG,REN,ZX,XU,SH,PAN,HZ,&YANG,J.(1985).A NEW TECHNOLOGY FOR MAKING THE SIO2 MASK WITH SUB-MICRON GROOVES ON GAAS SUBSTRATES.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,132(9),C404-C405.
MLA CHEN,XG,et al."A NEW TECHNOLOGY FOR MAKING THE SIO2 MASK WITH SUB-MICRON GROOVES ON GAAS SUBSTRATES".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 132.9(1985):C404-C405.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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