GERMANIUM INCORPORATION IN HEAVILY DOPED MOLECULAR-BEAM EPITAXY GROWN GAAS-GE
文献类型:期刊论文
作者 | LI, A ; MILNES, AG ; CHEN, ZY ; SHAO, YF ; WANG, SB |
刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
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出版日期 | 1985 |
卷号 | 3期号:2页码:629-633 |
通讯作者 | LI, A, CHINESE ACAD SCI,SHANGHAI INST MET,SHANGHAI,PEOPLES R CHINA |
学科主题 | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied |
收录类别 | SCI |
原文出处 | http://avspublications.org/jvstb/resource/1/jvtbd9/v3/i2/p629_s1 |
语种 | 英语 |
公开日期 | 2012-03-25 |
源URL | [http://ir.sim.ac.cn/handle/331004/98068] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前) |
推荐引用方式 GB/T 7714 | LI, A,MILNES, AG,CHEN, ZY,et al. GERMANIUM INCORPORATION IN HEAVILY DOPED MOLECULAR-BEAM EPITAXY GROWN GAAS-GE[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1985,3(2):629-633. |
APA | LI, A,MILNES, AG,CHEN, ZY,SHAO, YF,&WANG, SB.(1985).GERMANIUM INCORPORATION IN HEAVILY DOPED MOLECULAR-BEAM EPITAXY GROWN GAAS-GE.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,3(2),629-633. |
MLA | LI, A,et al."GERMANIUM INCORPORATION IN HEAVILY DOPED MOLECULAR-BEAM EPITAXY GROWN GAAS-GE".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 3.2(1985):629-633. |
入库方式: OAI收割
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