中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
GERMANIUM INCORPORATION IN HEAVILY DOPED MOLECULAR-BEAM EPITAXY GROWN GAAS-GE

文献类型:期刊论文

作者LI, A ; MILNES, AG ; CHEN, ZY ; SHAO, YF ; WANG, SB
刊名JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
出版日期1985
卷号3期号:2页码:629-633
通讯作者LI, A, CHINESE ACAD SCI,SHANGHAI INST MET,SHANGHAI,PEOPLES R CHINA
学科主题Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
收录类别SCI
原文出处http://avspublications.org/jvstb/resource/1/jvtbd9/v3/i2/p629_s1
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98068]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
LI, A,MILNES, AG,CHEN, ZY,et al. GERMANIUM INCORPORATION IN HEAVILY DOPED MOLECULAR-BEAM EPITAXY GROWN GAAS-GE[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1985,3(2):629-633.
APA LI, A,MILNES, AG,CHEN, ZY,SHAO, YF,&WANG, SB.(1985).GERMANIUM INCORPORATION IN HEAVILY DOPED MOLECULAR-BEAM EPITAXY GROWN GAAS-GE.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,3(2),629-633.
MLA LI, A,et al."GERMANIUM INCORPORATION IN HEAVILY DOPED MOLECULAR-BEAM EPITAXY GROWN GAAS-GE".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 3.2(1985):629-633.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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