中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
LOCALIZATION EFFECT OF ELECTRONS IN THE INP-SIO2 INTERFACE

文献类型:期刊论文

作者MAO, EW ; ZHANG, HR ; WANG, WY ; YE, L ; FANG, GP
刊名PHYSICA STATUS SOLIDI B-BASIC RESEARCH
出版日期1986
卷号138期号:2页码:735-743
ISSN号0370-1972
通讯作者MAO, EW, ACAD SINICA,SHANGHAI INST MET,865 CHANG HING RD,200050 SHANGHAI,PEOPLES R CHINA
学科主题Physics, Condensed Matter
收录类别SCI
原文出处http://onlinelibrary.wiley.com/doi/10.1002/pssb.2221380239/abstract?systemMessage=Wiley+Online+Library+will+be+disrupted+4+Feb+from+10-12+GMT+for+monthly+maintenance
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98085]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
MAO, EW,ZHANG, HR,WANG, WY,et al. LOCALIZATION EFFECT OF ELECTRONS IN THE INP-SIO2 INTERFACE[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH,1986,138(2):735-743.
APA MAO, EW,ZHANG, HR,WANG, WY,YE, L,&FANG, GP.(1986).LOCALIZATION EFFECT OF ELECTRONS IN THE INP-SIO2 INTERFACE.PHYSICA STATUS SOLIDI B-BASIC RESEARCH,138(2),735-743.
MLA MAO, EW,et al."LOCALIZATION EFFECT OF ELECTRONS IN THE INP-SIO2 INTERFACE".PHYSICA STATUS SOLIDI B-BASIC RESEARCH 138.2(1986):735-743.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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