CHARACTERIZATION OF GAAS1-YSBY GROWN BY MOLECULAR-BEAM EPITAXY
文献类型：期刊论文
| 作者 | LI, AZ ; ZHAO, JH ; JEONG, JC ; WONG, D ; ZHOU, WC ; LEE, JC ; KOYANAGI, T ; CHEN, ZY ; SCHLESINGER, TE ; MILNES, AG |
| 刊名 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
 |
| 出版日期 | 1988 |
| 卷号 | 1期号:2页码:203-211 |
| ISSN号 | 0921-5107 |
| 通讯作者 | LI, AZ, CHINESE ACAD SCI,SHANGHAI INST MET,SHANGHAI,PEOPLES R CHINA |
| 学科主题 | Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 原文出处 | http://www.sciencedirect.com/science/article/pii/0921510788900207 |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98133]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | LI, AZ,ZHAO, JH,JEONG, JC,et al. CHARACTERIZATION OF GAAS1-YSBY GROWN BY MOLECULAR-BEAM EPITAXY[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,1988,1(2):203-211. |
| APA | LI, AZ.,ZHAO, JH.,JEONG, JC.,WONG, D.,ZHOU, WC.,...&MILNES, AG.(1988).CHARACTERIZATION OF GAAS1-YSBY GROWN BY MOLECULAR-BEAM EPITAXY.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,1(2),203-211. |
| MLA | LI, AZ,et al."CHARACTERIZATION OF GAAS1-YSBY GROWN BY MOLECULAR-BEAM EPITAXY".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 1.2(1988):203-211. |
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