中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
THE IR STUDIES OF HYDROGEN-DEFECT-IMPURITY COMPLEXES IN C-SI GROWN IN HYDROGEN ATMOSPHERE

文献类型:期刊论文

作者SHI, TS ; BAI, GR ; QI, MW ; XIE, LM
刊名RADIATION EFFECTS AND DEFECTS IN SOLIDS
出版日期1989
卷号112期号:1-2页码:369-374
ISSN号1042-0150
通讯作者SHI, TS, CHINESE ACAD SCI,SHANGHAI INST MET,SHANGHAI,PEOPLES R CHINA
学科主题Nuclear Science & Technology; Physics, Condensed Matter
收录类别SCI
原文出处http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=233&SID=Y1p6iIKgd@dencla9el&page=1&doc=1
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98202]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
SHI, TS,BAI, GR,QI, MW,et al. THE IR STUDIES OF HYDROGEN-DEFECT-IMPURITY COMPLEXES IN C-SI GROWN IN HYDROGEN ATMOSPHERE[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS,1989,112(1-2):369-374.
APA SHI, TS,BAI, GR,QI, MW,&XIE, LM.(1989).THE IR STUDIES OF HYDROGEN-DEFECT-IMPURITY COMPLEXES IN C-SI GROWN IN HYDROGEN ATMOSPHERE.RADIATION EFFECTS AND DEFECTS IN SOLIDS,112(1-2),369-374.
MLA SHI, TS,et al."THE IR STUDIES OF HYDROGEN-DEFECT-IMPURITY COMPLEXES IN C-SI GROWN IN HYDROGEN ATMOSPHERE".RADIATION EFFECTS AND DEFECTS IN SOLIDS 112.1-2(1989):369-374.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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