THE IR STUDIES OF HYDROGEN-DEFECT-IMPURITY COMPLEXES IN C-SI GROWN IN HYDROGEN ATMOSPHERE
文献类型:期刊论文
作者 | SHI, TS ; BAI, GR ; QI, MW ; XIE, LM |
刊名 | RADIATION EFFECTS AND DEFECTS IN SOLIDS |
出版日期 | 1989 |
卷号 | 112期号:1-2页码:369-374 |
ISSN号 | 1042-0150 |
通讯作者 | SHI, TS, CHINESE ACAD SCI,SHANGHAI INST MET,SHANGHAI,PEOPLES R CHINA |
学科主题 | Nuclear Science & Technology; Physics, Condensed Matter |
收录类别 | SCI |
原文出处 | http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=233&SID=Y1p6iIKgd@dencla9el&page=1&doc=1 |
语种 | 英语 |
公开日期 | 2012-03-25 |
源URL | [http://ir.sim.ac.cn/handle/331004/98202] |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前) |
推荐引用方式 GB/T 7714 | SHI, TS,BAI, GR,QI, MW,et al. THE IR STUDIES OF HYDROGEN-DEFECT-IMPURITY COMPLEXES IN C-SI GROWN IN HYDROGEN ATMOSPHERE[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS,1989,112(1-2):369-374. |
APA | SHI, TS,BAI, GR,QI, MW,&XIE, LM.(1989).THE IR STUDIES OF HYDROGEN-DEFECT-IMPURITY COMPLEXES IN C-SI GROWN IN HYDROGEN ATMOSPHERE.RADIATION EFFECTS AND DEFECTS IN SOLIDS,112(1-2),369-374. |
MLA | SHI, TS,et al."THE IR STUDIES OF HYDROGEN-DEFECT-IMPURITY COMPLEXES IN C-SI GROWN IN HYDROGEN ATMOSPHERE".RADIATION EFFECTS AND DEFECTS IN SOLIDS 112.1-2(1989):369-374. |
入库方式: OAI收割
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