TRAP GETTERING BY ISOELECTRONIC DOPING OF P-GAAS AND N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY
文献类型：期刊论文
| 作者 | LI, A ; KIM, HK ; JEONG, JC ; WONG, D ; ZHAO, JH ; FANG, ZQ ; SCHLESINGER, TE ; MILNES, AG |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1989 |
| 卷号 | 95期号:1-4页码:296-300 |
| ISSN号 | 0022-0248 |
| 通讯作者 | LI, A, CHINESE ACAD SCI,SHANGHAI INST MET,SHANGHAI,PEOPLES R CHINA |
| 学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 原文出处 | http://www.sciencedirect.com/science/article/pii/0022024889904053 |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98240]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | LI, A,KIM, HK,JEONG, JC,et al. TRAP GETTERING BY ISOELECTRONIC DOPING OF P-GAAS AND N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY[J]. JOURNAL OF CRYSTAL GROWTH,1989,95(1-4):296-300. |
| APA | LI, A.,KIM, HK.,JEONG, JC.,WONG, D.,ZHAO, JH.,...&MILNES, AG.(1989).TRAP GETTERING BY ISOELECTRONIC DOPING OF P-GAAS AND N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY.JOURNAL OF CRYSTAL GROWTH,95(1-4),296-300. |
| MLA | LI, A,et al."TRAP GETTERING BY ISOELECTRONIC DOPING OF P-GAAS AND N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY".JOURNAL OF CRYSTAL GROWTH 95.1-4(1989):296-300. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。