中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
TEM STUDY OF THE MOLECULAR EFFECT IN PHOSPHORUS IMPLANTED SILICON

文献类型:期刊论文

作者SHI, TS ; DEVEIRMAN, A ; VANLANDUYT, J ; YANG, GQ ; LIN, CL
刊名PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
出版日期1990
卷号120期号:2页码:K131-&
ISSN号0031-8965
通讯作者SHI, TS, ACAD SINICA,SHANGHAI INST MET,SHANGHAI 200050,PEOPLES R CHINA
学科主题Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
收录类别SCI
原文出处http://onlinelibrary.wiley.com/doi/10.1002/pssa.2211200247/abstract?systemMessage=Wiley+Online+Library+will+be+disrupted+4+Feb+from+10-12+GMT+for+monthly+maintenance
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98247]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
SHI, TS,DEVEIRMAN, A,VANLANDUYT, J,et al. TEM STUDY OF THE MOLECULAR EFFECT IN PHOSPHORUS IMPLANTED SILICON[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,1990,120(2):K131-&.
APA SHI, TS,DEVEIRMAN, A,VANLANDUYT, J,YANG, GQ,&LIN, CL.(1990).TEM STUDY OF THE MOLECULAR EFFECT IN PHOSPHORUS IMPLANTED SILICON.PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,120(2),K131-&.
MLA SHI, TS,et al."TEM STUDY OF THE MOLECULAR EFFECT IN PHOSPHORUS IMPLANTED SILICON".PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 120.2(1990):K131-&.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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