DAMAGE ANNEALING BEHAVIOR IN DIATOMIC PHOSPHORUS ION-IMPLANTED SILICON
文献类型：期刊论文
| 作者 | YANG, GQ ; KHANH, NQ ; FRIED, M ; KOTAI, E ; SCHILLER, V ; LU, LC ; GYULAI, J ; ZOU, SH |
| 刊名 | RADIATION EFFECTS AND DEFECTS IN SOLIDS
 |
| 出版日期 | 1990 |
| 卷号 | 115期号:1-3页码:183-192 |
| 关键词 | BOMBARDMENT SI GE |
| ISSN号 | 1042-0150 |
| 通讯作者 | YANG, GQ, TECH UNIV BUDAPEST,JOINT CHAIR EXPTL PHYS,POB 49,H-1525 BUDAPEST,HUNGARY |
| 学科主题 | Nuclear Science & Technology; Physics, Condensed Matter |
| 收录类别 | SCI |
| 原文出处 | http://www.tandfonline.com/doi/abs/10.1080/10420159008220566 |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98259]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | YANG, GQ,KHANH, NQ,FRIED, M,et al. DAMAGE ANNEALING BEHAVIOR IN DIATOMIC PHOSPHORUS ION-IMPLANTED SILICON[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS,1990,115(1-3):183-192. |
| APA | YANG, GQ.,KHANH, NQ.,FRIED, M.,KOTAI, E.,SCHILLER, V.,...&ZOU, SH.(1990).DAMAGE ANNEALING BEHAVIOR IN DIATOMIC PHOSPHORUS ION-IMPLANTED SILICON.RADIATION EFFECTS AND DEFECTS IN SOLIDS,115(1-3),183-192. |
| MLA | YANG, GQ,et al."DAMAGE ANNEALING BEHAVIOR IN DIATOMIC PHOSPHORUS ION-IMPLANTED SILICON".RADIATION EFFECTS AND DEFECTS IN SOLIDS 115.1-3(1990):183-192. |
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