中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
EPR EVIDENCE FOR AS INTERSTITIAL-RELATED DEFECTS IN SEMI-INSULATING GAAS

文献类型:期刊论文

作者CHRISTOFFEL, E ; BENCHIGUER, T ; GOLTZENE, A ; SCHWAB, C ; WANG, GY ; WU, J
刊名PHYSICAL REVIEW B
出版日期1990
卷号42期号:6页码:3461-3468
ISSN号0163-1829
通讯作者CHRISTOFFEL, E, UNIV LOUIS PASTEUR,CNRS,INST NATL PHYS NUCL & PHYS PARTICULES,CTR RECH NUCL,RECH PHYS & MAT GRP,F-67037 STRASBOURG,FRANCE
学科主题Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98273]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
CHRISTOFFEL, E,BENCHIGUER, T,GOLTZENE, A,et al. EPR EVIDENCE FOR AS INTERSTITIAL-RELATED DEFECTS IN SEMI-INSULATING GAAS[J]. PHYSICAL REVIEW B,1990,42(6):3461-3468.
APA CHRISTOFFEL, E,BENCHIGUER, T,GOLTZENE, A,SCHWAB, C,WANG, GY,&WU, J.(1990).EPR EVIDENCE FOR AS INTERSTITIAL-RELATED DEFECTS IN SEMI-INSULATING GAAS.PHYSICAL REVIEW B,42(6),3461-3468.
MLA CHRISTOFFEL, E,et al."EPR EVIDENCE FOR AS INTERSTITIAL-RELATED DEFECTS IN SEMI-INSULATING GAAS".PHYSICAL REVIEW B 42.6(1990):3461-3468.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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