EPR EVIDENCE FOR AS INTERSTITIAL-RELATED DEFECTS IN SEMI-INSULATING GAAS
文献类型:期刊论文
作者 | CHRISTOFFEL, E ; BENCHIGUER, T ; GOLTZENE, A ; SCHWAB, C ; WANG, GY ; WU, J |
刊名 | PHYSICAL REVIEW B
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出版日期 | 1990 |
卷号 | 42期号:6页码:3461-3468 |
ISSN号 | 0163-1829 |
通讯作者 | CHRISTOFFEL, E, UNIV LOUIS PASTEUR,CNRS,INST NATL PHYS NUCL & PHYS PARTICULES,CTR RECH NUCL,RECH PHYS & MAT GRP,F-67037 STRASBOURG,FRANCE |
学科主题 | Physics, Condensed Matter |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-25 |
源URL | [http://ir.sim.ac.cn/handle/331004/98273] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前) |
推荐引用方式 GB/T 7714 | CHRISTOFFEL, E,BENCHIGUER, T,GOLTZENE, A,et al. EPR EVIDENCE FOR AS INTERSTITIAL-RELATED DEFECTS IN SEMI-INSULATING GAAS[J]. PHYSICAL REVIEW B,1990,42(6):3461-3468. |
APA | CHRISTOFFEL, E,BENCHIGUER, T,GOLTZENE, A,SCHWAB, C,WANG, GY,&WU, J.(1990).EPR EVIDENCE FOR AS INTERSTITIAL-RELATED DEFECTS IN SEMI-INSULATING GAAS.PHYSICAL REVIEW B,42(6),3461-3468. |
MLA | CHRISTOFFEL, E,et al."EPR EVIDENCE FOR AS INTERSTITIAL-RELATED DEFECTS IN SEMI-INSULATING GAAS".PHYSICAL REVIEW B 42.6(1990):3461-3468. |
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