中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
AN INFRARED-ABSORPTION BAND CAUSED BY H+ IMPLANTATION IN LINBO3 CRYSTALS

文献类型:期刊论文

作者FENG, XQ ; SHAO, TH ; ZHANG, JZ
刊名JOURNAL OF PHYSICS-CONDENSED MATTER
出版日期1991
卷号3期号:23页码:4145-4150
ISSN号0953-8984
关键词ION-IMPLANTATION HELIUM OH
通讯作者FENG, XQ, ACAD SINICA,SHANGHAI INST CERAM,1295 DINGXI RD,SHANGHAI 200050,PEOPLES R CHINA
学科主题Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98299]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
FENG, XQ,SHAO, TH,ZHANG, JZ. AN INFRARED-ABSORPTION BAND CAUSED BY H+ IMPLANTATION IN LINBO3 CRYSTALS[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,1991,3(23):4145-4150.
APA FENG, XQ,SHAO, TH,&ZHANG, JZ.(1991).AN INFRARED-ABSORPTION BAND CAUSED BY H+ IMPLANTATION IN LINBO3 CRYSTALS.JOURNAL OF PHYSICS-CONDENSED MATTER,3(23),4145-4150.
MLA FENG, XQ,et al."AN INFRARED-ABSORPTION BAND CAUSED BY H+ IMPLANTATION IN LINBO3 CRYSTALS".JOURNAL OF PHYSICS-CONDENSED MATTER 3.23(1991):4145-4150.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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