NITROGEN-OXYGEN COMPLEXES IN SILICON STUDIED BY PHOTOTHERMAL IONIZATION SPECTROSCOPY
文献类型：期刊论文
| 作者 | HU, CM ; HUANG, YX ; YE, HJ ; SHEN, SC ; QI, MW |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 1991 |
| 卷号 | 59期号:18页码:2260-2262 |
| 关键词 | SHALLOW DONORS IMPURITIES |
| ISSN号 | 0003-6951 |
| 通讯作者 | HU, CM, ACAD SINICA,SHANGHAI INST TECH PHYS,NATL LAB INFRARED PHYS,SHANGHAI 200083,PEOPLES R CHINA |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98325]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | HU, CM,HUANG, YX,YE, HJ,et al. NITROGEN-OXYGEN COMPLEXES IN SILICON STUDIED BY PHOTOTHERMAL IONIZATION SPECTROSCOPY[J]. APPLIED PHYSICS LETTERS,1991,59(18):2260-2262. |
| APA | HU, CM,HUANG, YX,YE, HJ,SHEN, SC,&QI, MW.(1991).NITROGEN-OXYGEN COMPLEXES IN SILICON STUDIED BY PHOTOTHERMAL IONIZATION SPECTROSCOPY.APPLIED PHYSICS LETTERS,59(18),2260-2262. |
| MLA | HU, CM,et al."NITROGEN-OXYGEN COMPLEXES IN SILICON STUDIED BY PHOTOTHERMAL IONIZATION SPECTROSCOPY".APPLIED PHYSICS LETTERS 59.18(1991):2260-2262. |
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