THE NATURE OF AS-RELATED DEFECTS IN SEMIINSULATING GAAS BULK CRYSTALS
文献类型：期刊论文
| 作者 | MO, PG ; WU, J ; FAN, XQ ; ZHU, J ; ZHOU, YD ; TAN, HZ |
| 刊名 | CRYSTAL RESEARCH AND TECHNOLOGY
 |
| 出版日期 | 1992 |
| 卷号 | 27期号:3页码:373-379 |
| 关键词 | ENCAPSULATED CZOCHRALSKI GAAS STRESS-STRAIN MODEL CHEMICAL PRINCIPLES ARSENIC PRESSURE LEC GAAS EL2 IDENTIFICATION WAFERS SEMICONDUCTOR |
| ISSN号 | 0232-1300 |
| 通讯作者 | MO, PG, ACAD SINICA,SHANGHAI INST MET,865 CHANG NING RD,SHANGHAI 200050,PEOPLES R CHINA |
| 学科主题 | Crystallography |
| 收录类别 | SCI |
| 原文出处 | http://onlinelibrary.wiley.com/doi/10.1002/crat.2170270315/abstract;jsessionid=2DC71B49229BF042CF3B1905C7892796.d02t04?systemMessage=Wiley+Online+Library+will+be+disrupted+4+Feb+from+10-12+GMT+for+monthly+maintenance |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98370]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | MO, PG,WU, J,FAN, XQ,et al. THE NATURE OF AS-RELATED DEFECTS IN SEMIINSULATING GAAS BULK CRYSTALS[J]. CRYSTAL RESEARCH AND TECHNOLOGY,1992,27(3):373-379. |
| APA | MO, PG,WU, J,FAN, XQ,ZHU, J,ZHOU, YD,&TAN, HZ.(1992).THE NATURE OF AS-RELATED DEFECTS IN SEMIINSULATING GAAS BULK CRYSTALS.CRYSTAL RESEARCH AND TECHNOLOGY,27(3),373-379. |
| MLA | MO, PG,et al."THE NATURE OF AS-RELATED DEFECTS IN SEMIINSULATING GAAS BULK CRYSTALS".CRYSTAL RESEARCH AND TECHNOLOGY 27.3(1992):373-379. |
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