INSITU GROWTH OF HIGH-TC YBA2CU3O7-X FILMS AT HIGH DEPOSITION RATE BY LOW-PRESSURE MOCVD
文献类型：期刊论文
| 作者 | TAO,W ; QIAN,CT ; YE,CQ |
| 刊名 | MATERIALS LETTERS
 |
| 出版日期 | 1992 |
| 卷号 | 14期号:5-6页码:255-258 |
| 关键词 | CHEMICAL VAPOR-DEPOSITION SUPERCONDUCTING THIN-FILMS |
| ISSN号 | 0167-577X |
| 通讯作者 | TAO, W, ACAD SINICA,SHANGHAI INST MET,SHANGHAI 200050,PEOPLES R CHINA |
| 学科主题 | Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 原文出处 | http://www.sciencedirect.com/science/article/pii/0167577X9290031E |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98406]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | TAO,W,QIAN,CT,YE,CQ. INSITU GROWTH OF HIGH-TC YBA2CU3O7-X FILMS AT HIGH DEPOSITION RATE BY LOW-PRESSURE MOCVD[J]. MATERIALS LETTERS,1992,14(5-6):255-258. |
| APA | TAO,W,QIAN,CT,&YE,CQ.(1992).INSITU GROWTH OF HIGH-TC YBA2CU3O7-X FILMS AT HIGH DEPOSITION RATE BY LOW-PRESSURE MOCVD.MATERIALS LETTERS,14(5-6),255-258. |
| MLA | TAO,W,et al."INSITU GROWTH OF HIGH-TC YBA2CU3O7-X FILMS AT HIGH DEPOSITION RATE BY LOW-PRESSURE MOCVD".MATERIALS LETTERS 14.5-6(1992):255-258. |
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