THE BEHAVIOR OF DOPANT INCORPORATION AND INTERNAL STRAIN IN ALXGA1-XAS0.03SB0.97 GROWN BY MOLECULAR-BEAM EPITAXY
文献类型：期刊论文
| 作者 | LI,AZ ; WANG,JX ; ZHENG,YL ; RU,GP ; BI,WG ; CHEN,ZX ; ZHU,NC |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1993 |
| 卷号 | 127期号:1-4页码:566-569 |
| ISSN号 | 0022-0248 |
| 通讯作者 | LI, AZ, CHINESE ACAD SCI,SHANGHAI INST MET,DEPT SEMICOND MAT,SHANGHAI 200050,PEOPLES R CHINA |
| 学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 原文出处 | http://www.sciencedirect.com/science/article/pii/002202489390684O |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98449]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | LI,AZ,WANG,JX,ZHENG,YL,et al. THE BEHAVIOR OF DOPANT INCORPORATION AND INTERNAL STRAIN IN ALXGA1-XAS0.03SB0.97 GROWN BY MOLECULAR-BEAM EPITAXY[J]. JOURNAL OF CRYSTAL GROWTH,1993,127(1-4):566-569. |
| APA | LI,AZ.,WANG,JX.,ZHENG,YL.,RU,GP.,BI,WG.,...&ZHU,NC.(1993).THE BEHAVIOR OF DOPANT INCORPORATION AND INTERNAL STRAIN IN ALXGA1-XAS0.03SB0.97 GROWN BY MOLECULAR-BEAM EPITAXY.JOURNAL OF CRYSTAL GROWTH,127(1-4),566-569. |
| MLA | LI,AZ,et al."THE BEHAVIOR OF DOPANT INCORPORATION AND INTERNAL STRAIN IN ALXGA1-XAS0.03SB0.97 GROWN BY MOLECULAR-BEAM EPITAXY".JOURNAL OF CRYSTAL GROWTH 127.1-4(1993):566-569. |
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