DAMAGE ENHANCEMENT EFFECT IN SILICON IMPLANTED WITH MOLECULAR-IONS
文献类型:期刊论文
| 作者 | LIN,CL ; YANG,GQ ; FANG,ZW ; LI,XQ ; Zou,SC(邹世昌) ; GYULAI,J ; ELLIMAN,RG |
| 刊名 | SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
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| 出版日期 | 1993 |
| 卷号 | 36期号:2页码:235-242 |
| 关键词 | DENSITY SPIKES |
| ISSN号 | 1001-6511 |
| 通讯作者 | LIN, CL, ACAD SINICA,SHANGHAI INST MET,SHANGHAI 200050,PEOPLES R CHINA |
| 学科主题 | Mathematics, Applied; Mathematics |
| 收录类别 | SCI |
| 原文出处 | http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=13&SID=Y1p6iIKgd@dencla9el&page=3&doc=29 |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98450] ![]() |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前) |
| 推荐引用方式 GB/T 7714 | LIN,CL,YANG,GQ,FANG,ZW,et al. DAMAGE ENHANCEMENT EFFECT IN SILICON IMPLANTED WITH MOLECULAR-IONS[J]. SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,1993,36(2):235-242. |
| APA | LIN,CL.,YANG,GQ.,FANG,ZW.,LI,XQ.,Zou,SC.,...&ELLIMAN,RG.(1993).DAMAGE ENHANCEMENT EFFECT IN SILICON IMPLANTED WITH MOLECULAR-IONS.SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,36(2),235-242. |
| MLA | LIN,CL,et al."DAMAGE ENHANCEMENT EFFECT IN SILICON IMPLANTED WITH MOLECULAR-IONS".SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY 36.2(1993):235-242. |
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