中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
DAMAGE ENHANCEMENT EFFECT IN SILICON IMPLANTED WITH MOLECULAR-IONS

文献类型:期刊论文

作者LIN,CL ; YANG,GQ ; FANG,ZW ; LI,XQ ; Zou,SC(邹世昌) ; GYULAI,J ; ELLIMAN,RG
刊名SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
出版日期1993
卷号36期号:2页码:235-242
关键词DENSITY SPIKES
ISSN号1001-6511
通讯作者LIN, CL, ACAD SINICA,SHANGHAI INST MET,SHANGHAI 200050,PEOPLES R CHINA
学科主题Mathematics, Applied; Mathematics
收录类别SCI
原文出处http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=13&SID=Y1p6iIKgd@dencla9el&page=3&doc=29
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98450]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
LIN,CL,YANG,GQ,FANG,ZW,et al. DAMAGE ENHANCEMENT EFFECT IN SILICON IMPLANTED WITH MOLECULAR-IONS[J]. SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,1993,36(2):235-242.
APA LIN,CL.,YANG,GQ.,FANG,ZW.,LI,XQ.,Zou,SC.,...&ELLIMAN,RG.(1993).DAMAGE ENHANCEMENT EFFECT IN SILICON IMPLANTED WITH MOLECULAR-IONS.SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,36(2),235-242.
MLA LIN,CL,et al."DAMAGE ENHANCEMENT EFFECT IN SILICON IMPLANTED WITH MOLECULAR-IONS".SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY 36.2(1993):235-242.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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