中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
INSULATOR STRUCTURES OBTAINED BY HIGH-DOSE NITROGEN IMPLANTATION INTO ALUMINUM ON SILICON

文献类型:期刊论文

作者LIN,CL ; HEMMENT,PLF ; NEJIM,A ; ZHANG,JP ; LI,JH ; Zou,SC(邹世昌)
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期1993
卷号74期号:1-2页码:206-209
关键词NITRIDE
ISSN号0168-583X
通讯作者LIN, CL, ACAD SINICA,SHANGHAI INST MET,ION BEAM LAB,SHANGHAI 200050,PEOPLES R CHINA
学科主题Instruments & Instrumentation; Nuclear Science & Technology; Physics, Atomic, Molecular & Chemical; Physics, Nuclear
收录类别SCI
原文出处http://www.sciencedirect.com/science/article/pii/0168583X93950446
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98487]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
LIN,CL,HEMMENT,PLF,NEJIM,A,et al. INSULATOR STRUCTURES OBTAINED BY HIGH-DOSE NITROGEN IMPLANTATION INTO ALUMINUM ON SILICON[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,1993,74(1-2):206-209.
APA LIN,CL,HEMMENT,PLF,NEJIM,A,ZHANG,JP,LI,JH,&Zou,SC.(1993).INSULATOR STRUCTURES OBTAINED BY HIGH-DOSE NITROGEN IMPLANTATION INTO ALUMINUM ON SILICON.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,74(1-2),206-209.
MLA LIN,CL,et al."INSULATOR STRUCTURES OBTAINED BY HIGH-DOSE NITROGEN IMPLANTATION INTO ALUMINUM ON SILICON".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 74.1-2(1993):206-209.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。