COMPARATIVE INVESTIGATION OF DAMAGE-INDUCED BY DIATOMIC AND MONOATOMIC ION-IMPLANTATION IN SILICON
文献类型：期刊论文
| 作者 | LOHNER,T ; TOTH,Z ; FRIED,M ; KHANH,NQ ; YANG,GQ ; LU,LC ; Zou,SC ; HANEKAMP,LJ ; VANSILFHOUT,A ; GYULAI,J |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 1994 |
| 卷号 | 85期号:1-4页码:524-527 |
| ISSN号 | 0168-583X |
| 学科主题 | Instruments & Instrumentation; Nuclear Science & Technology; Physics ; Atomic ; Molecular & Chemical; Physics ; Nuclear |
| 收录类别 | SCI |
| 原文出处 | http://www.sciencedirect.com/science/article/pii/0168583X94958769 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98536]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | LOHNER,T,TOTH,Z,FRIED,M,et al. COMPARATIVE INVESTIGATION OF DAMAGE-INDUCED BY DIATOMIC AND MONOATOMIC ION-IMPLANTATION IN SILICON[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,1994,85(1-4):524-527. |
| APA | LOHNER,T.,TOTH,Z.,FRIED,M.,KHANH,NQ.,YANG,GQ.,...&GYULAI,J.(1994).COMPARATIVE INVESTIGATION OF DAMAGE-INDUCED BY DIATOMIC AND MONOATOMIC ION-IMPLANTATION IN SILICON.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,85(1-4),524-527. |
| MLA | LOHNER,T,et al."COMPARATIVE INVESTIGATION OF DAMAGE-INDUCED BY DIATOMIC AND MONOATOMIC ION-IMPLANTATION IN SILICON".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 85.1-4(1994):524-527. |
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