SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BY SOLID-STATE INTERACTION OF CO/TI/SI AND CO/SI
文献类型:期刊论文
作者 | LIU, P ; LIN, CL ; ZHOU, ZY ; Zou, SC(邹世昌) ; WENG, HM ; HAN, RD ; LI, BZ |
刊名 | CHINESE PHYSICS LETTERS
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出版日期 | 1994 |
卷号 | 11期号:4页码:231-234 |
关键词 | VACANCIES GAAS BEAM |
ISSN号 | 0256-307X |
通讯作者 | LIU, P, ACAD SINICA,SHANGHAI INST MET,ION BEAM LAB,SHANGHAI 200050,PEOPLES R CHINA |
学科主题 | Physics, Multidisciplinary |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-25 |
源URL | [http://ir.sim.ac.cn/handle/331004/98561] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前) |
推荐引用方式 GB/T 7714 | LIU, P,LIN, CL,ZHOU, ZY,et al. SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BY SOLID-STATE INTERACTION OF CO/TI/SI AND CO/SI[J]. CHINESE PHYSICS LETTERS,1994,11(4):231-234. |
APA | LIU, P.,LIN, CL.,ZHOU, ZY.,Zou, SC.,WENG, HM.,...&LI, BZ.(1994).SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BY SOLID-STATE INTERACTION OF CO/TI/SI AND CO/SI.CHINESE PHYSICS LETTERS,11(4),231-234. |
MLA | LIU, P,et al."SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BY SOLID-STATE INTERACTION OF CO/TI/SI AND CO/SI".CHINESE PHYSICS LETTERS 11.4(1994):231-234. |
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