中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BY SOLID-STATE INTERACTION OF CO/TI/SI AND CO/SI

文献类型:期刊论文

作者LIU, P ; LIN, CL ; ZHOU, ZY ; Zou, SC(邹世昌) ; WENG, HM ; HAN, RD ; LI, BZ
刊名CHINESE PHYSICS LETTERS
出版日期1994
卷号11期号:4页码:231-234
关键词VACANCIES GAAS BEAM
ISSN号0256-307X
通讯作者LIU, P, ACAD SINICA,SHANGHAI INST MET,ION BEAM LAB,SHANGHAI 200050,PEOPLES R CHINA
学科主题Physics, Multidisciplinary
收录类别SCI
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98561]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
LIU, P,LIN, CL,ZHOU, ZY,et al. SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BY SOLID-STATE INTERACTION OF CO/TI/SI AND CO/SI[J]. CHINESE PHYSICS LETTERS,1994,11(4):231-234.
APA LIU, P.,LIN, CL.,ZHOU, ZY.,Zou, SC.,WENG, HM.,...&LI, BZ.(1994).SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BY SOLID-STATE INTERACTION OF CO/TI/SI AND CO/SI.CHINESE PHYSICS LETTERS,11(4),231-234.
MLA LIU, P,et al."SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BY SOLID-STATE INTERACTION OF CO/TI/SI AND CO/SI".CHINESE PHYSICS LETTERS 11.4(1994):231-234.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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