中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Transmission electron microscopy and spectroscopic ellipsometry studies of damage layer induced by large tilt angle ion implantation

文献类型:期刊论文

作者He,ZP ; Cristiano,F ; Zhou,ZY ; Qian,YH ; Chen,LY ; Lin,CL ; Hemment,PLF ; Zou,SC
刊名JOURNAL OF THE ELECTROCHEMICAL SOCIETY
出版日期1996
卷号143期号:8页码:2636-2640
关键词P+-N
ISSN号0013-4651
通讯作者He, ZP, CHINESE ACAD SCI,SHANGHAI INST MET,SHANGHAI 200050,PEOPLES R CHINA
学科主题Electrochemistry; Materials Science ; Coatings & Films
收录类别SCI
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98673]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
He,ZP,Cristiano,F,Zhou,ZY,et al. Transmission electron microscopy and spectroscopic ellipsometry studies of damage layer induced by large tilt angle ion implantation[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,1996,143(8):2636-2640.
APA He,ZP.,Cristiano,F.,Zhou,ZY.,Qian,YH.,Chen,LY.,...&Zou,SC.(1996).Transmission electron microscopy and spectroscopic ellipsometry studies of damage layer induced by large tilt angle ion implantation.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,143(8),2636-2640.
MLA He,ZP,et al."Transmission electron microscopy and spectroscopic ellipsometry studies of damage layer induced by large tilt angle ion implantation".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 143.8(1996):2636-2640.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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