Optical characterization of doped top layers in SOI structures formed by ion implantation
文献类型:期刊论文
| 作者 | Yu,YH ; Liu,XH ; Zou,SC ; Hemment,PLF |
| 刊名 | ION BEAM MODIFICATION OF MATERIALS
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| 出版日期 | 1996 |
| 期号 | 0页码:452-456 |
| 学科主题 | Engineering ; Electrical & Electronic; Materials Science ; Characterization & Testing |
| 收录类别 | SCI |
| 原文出处 | http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=26&SID=Q17j6Ejh3Mi@ML3HG1p&page=1&doc=1 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98688] ![]() |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前) |
| 推荐引用方式 GB/T 7714 | Yu,YH,Liu,XH,Zou,SC,et al. Optical characterization of doped top layers in SOI structures formed by ion implantation[J]. ION BEAM MODIFICATION OF MATERIALS,1996(0):452-456. |
| APA | Yu,YH,Liu,XH,Zou,SC,&Hemment,PLF.(1996).Optical characterization of doped top layers in SOI structures formed by ion implantation.ION BEAM MODIFICATION OF MATERIALS(0),452-456. |
| MLA | Yu,YH,et al."Optical characterization of doped top layers in SOI structures formed by ion implantation".ION BEAM MODIFICATION OF MATERIALS .0(1996):452-456. |
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