中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optical characterization of doped top layers in SOI structures formed by ion implantation

文献类型:期刊论文

作者Yu,YH ; Liu,XH ; Zou,SC ; Hemment,PLF
刊名ION BEAM MODIFICATION OF MATERIALS
出版日期1996
期号0页码:452-456
学科主题Engineering ; Electrical & Electronic; Materials Science ; Characterization & Testing
收录类别SCI
原文出处http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=26&SID=Q17j6Ejh3Mi@ML3HG1p&page=1&doc=1
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98688]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
Yu,YH,Liu,XH,Zou,SC,et al. Optical characterization of doped top layers in SOI structures formed by ion implantation[J]. ION BEAM MODIFICATION OF MATERIALS,1996(0):452-456.
APA Yu,YH,Liu,XH,Zou,SC,&Hemment,PLF.(1996).Optical characterization of doped top layers in SOI structures formed by ion implantation.ION BEAM MODIFICATION OF MATERIALS(0),452-456.
MLA Yu,YH,et al."Optical characterization of doped top layers in SOI structures formed by ion implantation".ION BEAM MODIFICATION OF MATERIALS .0(1996):452-456.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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