Characterization of photoluminescence intensity and efficiency of free excitons in semiconductor quantum well structures
文献类型：期刊论文
| 作者 | Jin, SR ; Zheng, YL ; Li, AZ |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 1997 |
| 卷号 | 82期号:8页码:3870-3873 |
| 关键词 | CARRIER CAPTURE RECOMBINATION DYNAMICS HETEROSTRUCTURES LASERS LAYERS |
| ISSN号 | 0021-8979 |
| 通讯作者 | Jin, SR, CHINESE ACAD SCI,SHANGHAI INST MET,STATE KEY LAB FUCT INFORMAT,SHANGHAI 200050,PEOPLES R CHINA |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98801]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Jin, SR,Zheng, YL,Li, AZ. Characterization of photoluminescence intensity and efficiency of free excitons in semiconductor quantum well structures[J]. JOURNAL OF APPLIED PHYSICS,1997,82(8):3870-3873. |
| APA | Jin, SR,Zheng, YL,&Li, AZ.(1997).Characterization of photoluminescence intensity and efficiency of free excitons in semiconductor quantum well structures.JOURNAL OF APPLIED PHYSICS,82(8),3870-3873. |
| MLA | Jin, SR,et al."Characterization of photoluminescence intensity and efficiency of free excitons in semiconductor quantum well structures".JOURNAL OF APPLIED PHYSICS 82.8(1997):3870-3873. |
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