中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures

文献类型:期刊论文

作者Li, AZ ; Zhao, Y ; Zheng, YL ; Chen, GT ; Ru, GP ; Shen, WZ ; Zhong, JQ
刊名JOURNAL OF CRYSTAL GROWTH
出版日期1997
卷号175页码:873-876
关键词DOUBLE-HETEROSTRUCTURE LASERS MOLECULAR-BEAM EPITAXY DIODE-LASERS MU-M OPERATION
ISSN号0022-0248
通讯作者Li, AZ, CHINESE ACAD SCI,SHANGHAI INST MET,STATE KEY LAB FUNCT MAT INFORMAT,SHANGHAI 200050,PEOPLES R CHINA
学科主题Crystallography; Materials Science, Multidisciplinary; Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98812]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
Li, AZ,Zhao, Y,Zheng, YL,et al. MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures[J]. JOURNAL OF CRYSTAL GROWTH,1997,175:873-876.
APA Li, AZ.,Zhao, Y.,Zheng, YL.,Chen, GT.,Ru, GP.,...&Zhong, JQ.(1997).MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures.JOURNAL OF CRYSTAL GROWTH,175,873-876.
MLA Li, AZ,et al."MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures".JOURNAL OF CRYSTAL GROWTH 175(1997):873-876.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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