MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures
文献类型：期刊论文
| 作者 | Li, AZ ; Zhao, Y ; Zheng, YL ; Chen, GT ; Ru, GP ; Shen, WZ ; Zhong, JQ |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1997 |
| 卷号 | 175页码:873-876 |
| 关键词 | DOUBLE-HETEROSTRUCTURE LASERS MOLECULAR-BEAM EPITAXY DIODE-LASERS MU-M OPERATION |
| ISSN号 | 0022-0248 |
| 通讯作者 | Li, AZ, CHINESE ACAD SCI,SHANGHAI INST MET,STATE KEY LAB FUNCT MAT INFORMAT,SHANGHAI 200050,PEOPLES R CHINA |
| 学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98812]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Li, AZ,Zhao, Y,Zheng, YL,et al. MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures[J]. JOURNAL OF CRYSTAL GROWTH,1997,175:873-876. |
| APA | Li, AZ.,Zhao, Y.,Zheng, YL.,Chen, GT.,Ru, GP.,...&Zhong, JQ.(1997).MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures.JOURNAL OF CRYSTAL GROWTH,175,873-876. |
| MLA | Li, AZ,et al."MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures".JOURNAL OF CRYSTAL GROWTH 175(1997):873-876. |
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